Samsung Electronics, a world leader in advanced semiconductor technology, today introduces its newest frequency (RF) technology that supported by the 8-nanometer (nm) process.
This cutting-edge foundry technology is predicted to supply a ‘one chip solution,’ specifically for 5G communications with support for multi-channel and multi-antenna chip designs. Samsung’s 8nm RF platform extension is predicted to expand the company’s leadership within the 5G semiconductor market from sub-6GHz to mmWave applications.
Samsung’s 8nm RF process technology is that the latest addition to an already broad portfolio of RF-related solutions, including 28nm- and 14nm-based RF. the corporate has established its RF market leadership through the shipping of quite 500 million mobile RF chips for premium smartphones since 2017.
Through nobility in innovation and process manufacturing, There have reinforced our next-generation wireless communication offerings,” said “Hyung Jin Lee” Master of Foundry Technology Development Team at Samsung Electronics. “As 5G mmWave expands, Samsung’s 8nm RF is going to be a good solution for patrons testing to find the long-life battery and Outstanding signal quality on dense mobile devices.”
Samsung’s New RFeFET Architecture
With continued scaling to advanced nodes, digital circuits have improved significantly in performance, power consumption, and area (PPA), whereas the analog/RF blocks haven’t enjoyed such an improvement thanks to degenerative parasitics like increased resistance from narrow line width. As a result, most communications chips tend to ascertain degraded RF characteristics like deteriorated amplification performance of reception frequency and increased power consumption.
To overcome the analog/RF scaling challenges, Samsung has developed a singular architecture exclusive to 8nm RF named RFextremeFET (RFeFET™) which will significantly improve RF characteristics while using less power. as compared to 14nm RF, Samsung’s RFeFET™ supplements the digital PPA scaling and restores the analog/RF scaling at an equivalent time, thereby enabling high-performance 5G platforms.
Samsung’s process optimization maximizes channel dynamism while minimizing parasitics. because the performance of RFeFET™ is greatly improved, the entire number of transistors of RF chips and therefore the area of analog/RF blocks are often reduced.
Compared to 14nm RF, Samsung’s 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease within the RF chip area as a result of the RFeFET™ architectural innovation.